PDF GaN-Based High-Efficiency, High- Density, High-Frequency Battery ... The EVB can be conveniently converted to double pulse testing board and it is designed to withstand a maximum bus voltage of 1000V. The architecture of the GaN transistor spice model resembles that of a silicon transistor. PD1500A Dynamic Power Device Analyzer/Double Pulse Tester As an off-the-shelf measurement solution, the PD1500A delivers reliable, repeatable measurements of wide-bandgap semiconductors. R results in [20], [29]. The platform ensures user safety and protection of the system's measurement hardware. PDF GSDN001 Double Pulse Test - GaN Systems The first version allows 'plug-in DUT, push button, and then get results and analysis safely and accurately' operation. The following equipment is required: • AFG31000: Connects to the isolated gate driver and uses the Double Pulse Test application on the unit to quickly generate the pulses with varying pulse widths. This paper selects a 650 V enhancement GaN HEMT GS66516T from GaN Systems for characterization. The wideband gap power semiconductor materials are Gallium Nitride (GaN) and Silicon Carbide (SiC) with bandgap of 3.4 eV and 3.2 eV respectively. Currently, DPT is the preferred procedure for determining the dynamic performance characteristics of GaN devices. To specifically overcome the limitation of the oscilloscope dynamic range, we developed a clamp circuit. Keysight Debuts a GaN Test Board for its PD1500A Testing System The application is compatible with all Tektronix VPI probes and, when used with the Tektronix IsoVu™ probes it helps uncover all the hidden artifacts of SiC or GaN . Various technologies solve challenges seen in the emerging WBG power device testing. Gallium Nitride. • In order to simplify the . Innoscience can also assist you in developing your . SiC and GaN Devices With Cryogenic Cooling | ORNL 5.3.4. Figure 6. Figure 1: Weibull plots of gate-to-source failures of EPC2212. The PD1500A Dynamic Power Device Analyzer/Double Pulse Tester now accepts tailor-made add-on GaN FET test boards to allow dynamic characterization of Si, IGBT, SiC and GaN power devices on a single test platform.
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